Analysis and design of CMOS match-impedance wide-band amplifiers

S. S. Lu, M. C. Chiang, Chin-Chun Meng*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The realization of matched impedance wide-band amplifiers fabricated by TSMC 0.35μm CMOS process is reported. The technique of multiple-feedback loops was used to achieve terminal impedance matching and wide bandwidth. The experimental results showed that a small signal gain of 12.7dB and a 3-dB bandwidth of 1.7GHz with in-band input/output return loss less than 10dB were obtained. The intrinsic over-damped characteristic of this amplifier was proved and source capacitive peaking was used to remedy this problem. The trade-off between the input impedance matching and bandwidth was also found.

Original languageEnglish
Title of host publicationAsia-Pacific Microwave Conference Proceedings, APMC
Pages288-290
Number of pages3
DOIs
StatePublished - 1 Dec 2001
Event2001 Asia-Pacific Microwave Conference - Taipei, Taiwan
Duration: 3 Dec 20016 Dec 2001

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume1

Conference

Conference2001 Asia-Pacific Microwave Conference
CountryTaiwan
CityTaipei
Period3/12/016/12/01

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