Analyses of the influences of layout and process modifications on thin-film transistors with metal-induced lateral crystallized poly-Si nanowire channels

Chun Jung Su*, Yu Feng Huang, Horng-Chih Lin, Tiao Yuan Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we investigate the effects of layout design and re-crystallization temperature on the performance of poly-Si thin-film transistors (TFTs) with metal-induced lateral crystallized (MILC) nanowire (NW) channels. It is found that the off-state leakage current shows strong dependence on the arrangement of MILC seeding windows, while the on-state behavior could be enhanced at a lower re-crystallization temperature because of reducing smaller solid-phase-crystallized (SPC) grains in the channel.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 26 Sep 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 Jun 201124 Jun 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

Keywords

  • metal-induced lateral crystallization
  • nanowire
  • thin-film transistor

Fingerprint Dive into the research topics of 'Analyses of the influences of layout and process modifications on thin-film transistors with metal-induced lateral crystallized poly-Si nanowire channels'. Together they form a unique fingerprint.

  • Cite this

    Su, C. J., Huang, Y. F., Lin, H-C., & Huang, T. Y. (2011). Analyses of the influences of layout and process modifications on thin-film transistors with metal-induced lateral crystallized poly-Si nanowire channels. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991716] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991716