An X-band, 23.8-dBm fully integrated power amplifier with 25.8% PAE in 0.18-μm CMOS technology

Ping Sung Chi*, Zuo-Min Tsai , Jing Lin Kuo, Kun You Lin, Huei Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

An X-band high efficiency power amplifier with the highest PAE is presented in this letter. The single-stage power amplifier is implemented in TSMC standard bulk 0.18-μm 1P6M CMOS technology. In order to obtain wide bandwidth at PAE and output power, broadband output and input matching network are adopted in the design. From the measurements, the power amplifier obtained the best PAE of 25.8% and saturation output power of 23.8 dBm at 9.5 GHz. Besides, this PA demonstrates a 1-dB power bandwidth from 7.8 to 11 GHz and the PAE within the band all exceed 20%. To our knowledge, this power amplifier has the highest PAE, the smallest chip size, and wide bandwidth of output power and PAE in CMOS amplifiers at X-band to date.

Original languageEnglish
Title of host publicationThe 5th European Microwave Integrated Circuits Conference
Pages436-439
Number of pages4
StatePublished - 6 Dec 2010
EventThe 5th European Microwave Integrated Circuits Conference - Paris, France
Duration: 27 Sep 201028 Sep 2010

Publication series

NameThe 5th European Microwave Integrated Circuits Conference

Conference

ConferenceThe 5th European Microwave Integrated Circuits Conference
CountryFrance
CityParis
Period27/09/1028/09/10

Keywords

  • CMOSFET power amplifiers
  • X-band

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