An ultralow-resistance ultrashallow metallic source/drain contact scheme for III-V NMOS

R. Oxland*, S. W. Chang, Xu Li, S. W. Wang, G. Radhakrishnan, W. Priyantha, M. J.H. Van Dal, C. H. Hsieh, G. Vellianitis, G. Doornbos, K. Bhuwalka, B. Duriez, I. Thayne, R. Droopad, M. Passlack, C. H. Diaz, Y. C. Sun

*Corresponding author for this work

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Abstract

We report an ultrashallow metallic source/drain (S/D) contact scheme for fully self-aligned III-V NMOS with specific contact resistivity and sheet resistance which, for the first time, demonstrate performance metrics that may be compatible with the ITRS R ext requirements for 12-nm technology generation device pitch. The record specific contact resistivity between the contact pad and metallic S/D of ρc =2.7ċ10 -9Ω̇cm 2 has been demonstrated for 10 nm undoped InAs channels by forming an ultrashallow crystalline ternary NiInAs phase with R sh = 97Ω/sq for a junction depth of 7 nm. The junction depth of the S/D scheme is highly controllable and atomically abrupt.

Original languageEnglish
Article number6155729
Pages (from-to)501-503
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number4
DOIs
StatePublished - Apr 2012

Keywords

  • High-mobility channel
  • III-V semiconductor materials
  • MOSFETs
  • semiconductor-metal interfaces

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    Oxland, R., Chang, S. W., Li, X., Wang, S. W., Radhakrishnan, G., Priyantha, W., Van Dal, M. J. H., Hsieh, C. H., Vellianitis, G., Doornbos, G., Bhuwalka, K., Duriez, B., Thayne, I., Droopad, R., Passlack, M., Diaz, C. H., & Sun, Y. C. (2012). An ultralow-resistance ultrashallow metallic source/drain contact scheme for III-V NMOS. IEEE Electron Device Letters, 33(4), 501-503. [6155729]. https://doi.org/10.1109/LED.2012.2185919