We report an ultrashallow metallic source/drain (S/D) contact scheme for fully self-aligned III-V NMOS with specific contact resistivity and sheet resistance which, for the first time, demonstrate performance metrics that may be compatible with the ITRS R ext requirements for 12-nm technology generation device pitch. The record specific contact resistivity between the contact pad and metallic S/D of ρc =2.7ċ10 -9Ω̇cm 2 has been demonstrated for 10 nm undoped InAs channels by forming an ultrashallow crystalline ternary NiInAs phase with R sh = 97Ω/sq for a junction depth of 7 nm. The junction depth of the S/D scheme is highly controllable and atomically abrupt.
- High-mobility channel
- III-V semiconductor materials
- semiconductor-metal interfaces