An ultra compact GaN 3x3 matrix converter

S. Nagai, Y. Yamada, Y. Kawai, N. Negoro, H. Handa, M. Hiraiwa, H. Ueno, Y. Kudoh, K. Mizutani, M. Ishida, T. Ueda, N. Otsuka, Daisuke Ueda

Research output: Contribution to journalConference articlepeer-review


In this paper, we describe compact isolated gated drivers with Drive-by-Microwave (DBM) technology, which can provide isolated gate signal and power all together by a microwave wireless power transmission. The fabricated GaN gate driver successfully drives a GaN power switching device without an isolated voltage source. Furthermore, an ultra-compact GaN 3x3 matrix converter with DBM technology is presented, which is composed of a GaN-GIT (Gate Injection Transistor) bi-directional power switches integration chip, electro-magnetic resonant coupling based isolated dividing couplers in printed circuit board to reduce the complicated gate lines, and an one-chip and low consumption GaN/Si DBM driver chip for 9 bi-directional power switch control. The proposed GaN 3x3 matrix converter for 5.0kW is overwhelmingly compact such as 25mm x 18mm because of GaN power device integration and the DBM technology. Furthermore the power consumption for all divers is very low as 2.0W due to the isolated microwave power source sharing.

Original languageEnglish
Pages (from-to)41-49
Number of pages9
JournalECS Transactions
Issue number7
StatePublished - 1 Jan 2014
EventSymposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies 4 - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 5 Oct 20149 Oct 2014

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