An SPDD p-MOSFET structure suitable for 0.1 and sub 0.1 micron channel length and its electrical characteristics

M. Saito, T. Yoshitomi, M. Ono, Y. Akasaka, H. Nii, S. Matsuda, H. S. Momose, Y. Katsumata, Y. Ushiku, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

22 Scopus citations

Abstract

A new solid-phase diffused drain (SPDD) structure has been developed for 0.1 and sub-0.1 um p-MOSFET technology. Highly doped ultra-shallow p+ source and drain junctions were achieved by solid-phase diffusion from the highly doped BSG sidewall. The extremely shallow and high concentration drain profile significantly improved short channel effects without increasing parasitic resistance. The excellent electrical characteristics and good hot-carrier reliability of the SPDD p-MOSFET are demonstrated.

Original languageEnglish
Title of host publication1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages897-900
Number of pages4
ISBN (Electronic)0780308174
DOIs
StatePublished - 1992
Event1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
Duration: 13 Dec 199216 Dec 1992

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1992-December
ISSN (Print)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
CountryUnited States
CitySan Francisco
Period13/12/9216/12/92

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