An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

Hsiao-Hsuan Hsu, Chun-Yen Chang, Chun-Hu Cheng, Shan Haw Chiou, Chiung Hui Huang, Yu Chien Chiu

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO: Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm(2)/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO: Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.
Original languageEnglish
Pages (from-to)933-938
Number of pages6
JournalIEEE Transactions on Nanotechnology
Volume13
Issue number5
DOIs
StatePublished - Sep 2014

Keywords

  • Gettering; InGaZnO (IGZO); thin-film transistor (TFT); titanium oxide (TiOx)

Fingerprint Dive into the research topics of 'An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor'. Together they form a unique fingerprint.

  • Cite this