An observation of oxygen precipitation retardation phenomenon induced by 450°c anneal in Czochralski silicon

Chung Yuan Kung; Wei Hsu; Chin Ming Liu; Ray-Hua Horng

doi:10.1143/JJAP.36.5025

An observation of oxygen precipitation retardation phenomenon induced by 450°c anneal in Czochralski silicon

Chung Yuan Kung^*, Wei Hsu, Chin Ming Liu, Ray-Hua Horng

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Two-step (450°C-1000°C) and three-step (1150°C-450°C-1000°C) annealing experiments were carried out to study oxygen precipitation behavior in Czochralski silicon. A distinct retardation of precipitation was observed during the two-step annealing, while the retardation during the three-step annealing was less pronounced. In the three-step annealing, the first high temperature (1150°C) annealing in a N₂ ambient caused the retardation of precipitation to occur at short nucleation times. The microstructure characteristics as a function of nucleation (450°C) annealing time were similar in the two-step and three-step annealed samples.

Original language	English
Pages (from-to)	5025-5028
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	36
Issue number	8
DOIs	https://doi.org/10.1143/JJAP.36.5025
State	Published - 1 Aug 1997

Keywords

Oxygen precipitate
Precipitation retardation
Rod-like defect
Three-step annealing
Two-step annealing

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title = "An observation of oxygen precipitation retardation phenomenon induced by 450°c anneal in Czochralski silicon",

abstract = "Two-step (450°C-1000°C) and three-step (1150°C-450°C-1000°C) annealing experiments were carried out to study oxygen precipitation behavior in Czochralski silicon. A distinct retardation of precipitation was observed during the two-step annealing, while the retardation during the three-step annealing was less pronounced. In the three-step annealing, the first high temperature (1150°C) annealing in a N2 ambient caused the retardation of precipitation to occur at short nucleation times. The microstructure characteristics as a function of nucleation (450°C) annealing time were similar in the two-step and three-step annealed samples.",

keywords = "Oxygen precipitate, Precipitation retardation, Rod-like defect, Three-step annealing, Two-step annealing",

author = "Kung, {Chung Yuan} and Wei Hsu and Liu, {Chin Ming} and Ray-Hua Horng",

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An observation of oxygen precipitation retardation phenomenon induced by 450°c anneal in Czochralski silicon. / Kung, Chung Yuan; Hsu, Wei; Liu, Chin Ming; Horng, Ray-Hua.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, No. 8, 01.08.1997, p. 5025-5028.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - An observation of oxygen precipitation retardation phenomenon induced by 450°c anneal in Czochralski silicon

AU - Kung, Chung Yuan

AU - Hsu, Wei

AU - Liu, Chin Ming

AU - Horng, Ray-Hua

PY - 1997/8/1

Y1 - 1997/8/1

N2 - Two-step (450°C-1000°C) and three-step (1150°C-450°C-1000°C) annealing experiments were carried out to study oxygen precipitation behavior in Czochralski silicon. A distinct retardation of precipitation was observed during the two-step annealing, while the retardation during the three-step annealing was less pronounced. In the three-step annealing, the first high temperature (1150°C) annealing in a N2 ambient caused the retardation of precipitation to occur at short nucleation times. The microstructure characteristics as a function of nucleation (450°C) annealing time were similar in the two-step and three-step annealed samples.

AB - Two-step (450°C-1000°C) and three-step (1150°C-450°C-1000°C) annealing experiments were carried out to study oxygen precipitation behavior in Czochralski silicon. A distinct retardation of precipitation was observed during the two-step annealing, while the retardation during the three-step annealing was less pronounced. In the three-step annealing, the first high temperature (1150°C) annealing in a N2 ambient caused the retardation of precipitation to occur at short nucleation times. The microstructure characteristics as a function of nucleation (450°C) annealing time were similar in the two-step and three-step annealed samples.

KW - Oxygen precipitate

KW - Precipitation retardation

KW - Rod-like defect

KW - Three-step annealing

KW - Two-step annealing

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DO - 10.1143/JJAP.36.5025

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SP - 5025

EP - 5028

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 8

ER -

An observation of oxygen precipitation retardation phenomenon induced by 450°c anneal in Czochralski silicon

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Keywords

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