An observation of oxygen precipitation retardation phenomenon induced by 450°c anneal in Czochralski silicon

Chung Yuan Kung*, Wei Hsu, Chin Ming Liu, Ray-Hua Horng

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Two-step (450°C-1000°C) and three-step (1150°C-450°C-1000°C) annealing experiments were carried out to study oxygen precipitation behavior in Czochralski silicon. A distinct retardation of precipitation was observed during the two-step annealing, while the retardation during the three-step annealing was less pronounced. In the three-step annealing, the first high temperature (1150°C) annealing in a N2 ambient caused the retardation of precipitation to occur at short nucleation times. The microstructure characteristics as a function of nucleation (450°C) annealing time were similar in the two-step and three-step annealed samples.

Original languageEnglish
Pages (from-to)5025-5028
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number8
DOIs
StatePublished - 1 Aug 1997

Keywords

  • Oxygen precipitate
  • Precipitation retardation
  • Rod-like defect
  • Three-step annealing
  • Two-step annealing

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