Abstract
Two-step (450°C-1000°C) and three-step (1150°C-450°C-1000°C) annealing experiments were carried out to study oxygen precipitation behavior in Czochralski silicon. A distinct retardation of precipitation was observed during the two-step annealing, while the retardation during the three-step annealing was less pronounced. In the three-step annealing, the first high temperature (1150°C) annealing in a N2 ambient caused the retardation of precipitation to occur at short nucleation times. The microstructure characteristics as a function of nucleation (450°C) annealing time were similar in the two-step and three-step annealed samples.
| Original language | English |
|---|---|
| Pages (from-to) | 5025-5028 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 36 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1 Aug 1997 |
Keywords
- Oxygen precipitate
- Precipitation retardation
- Rod-like defect
- Three-step annealing
- Two-step annealing
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Cite this
Kung, C. Y., Hsu, W., Liu, C. M., & Horng, R-H. (1997). An observation of oxygen precipitation retardation phenomenon induced by 450°c anneal in Czochralski silicon. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 36(8), 5025-5028. https://doi.org/10.1143/JJAP.36.5025