An investigation of scanning capacitance microscopy on iron-contaminated p-type silicon

M. N. Chang*, T. Y. Chang, Fu-Ming Pan, B. W. Wu, T. F. Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Scanning capacitance microscopy (SCM) is employed to examine iron-contaminated p-type Si samples. For slightly contaminated samples, a dc voltage of -0.8 V, applied between the sample and the conductive tip, induces positive trapped charges. Owing to the existence of these charges, the region containing trapped charges exhibits an obviously low dC/dV signal. According to contact-mode atomic force microscopy results, the surface morphology has little effect on the SCM signal. The experimental results indicate that SCM is capable of detecting the distribution of oxidation-related defects which cannot otherwise be easily observed by atomic force microscopy and transmission electron microscopy.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume4
Issue number9
DOIs
StatePublished - 1 Sep 2001

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