An investigation of CeO2 based ReRAM with p+ and n+-Si bottom electrodes

J. Jin*, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper we use the p+-Si and n+-Si as bottom electrode for CeO2 based ReRAM. The work function difference between p+-Si and n+-Si substrate gives out an about 0.6 V shift of the set and reset voltage. The mechanism of this shift was investigated and the set and reset of voltage with pulse width dependence was also concerned depends on p+-Si substrate.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2015, CSTIC 2015
EditorsCor Claeys, Qinghuang Lin, David Huang, Hanming Wu, Ru Huang, Kafei Lai, Ying Zhang, Beichao Zhang, Kuochun Wu, Larry Chen, Steve Liang, Peilin Song, Hsiang-Lan Lung, Dong Chen, Qi Wang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479972418
DOIs
StatePublished - 8 Jul 2015
Event2015 China Semiconductor Technology International Conference, CSTIC 2015 - Shanghai, China
Duration: 15 Mar 201516 Mar 2015

Publication series

NameChina Semiconductor Technology International Conference 2015, CSTIC 2015

Conference

Conference2015 China Semiconductor Technology International Conference, CSTIC 2015
CountryChina
CityShanghai
Period15/03/1516/03/15

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