An investigation of carbon-doping-induced current collapse in GaN-on-si high electron mobility transistors

An Jye Tzou, Dan Hua Hsieh, Szu Hung Chen, Yu Kuang Liao, Zhen Yu Li, Chun Yen Chang, Hao-Chung Kuo*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

This paper reports the successful fabrication of a GaN-on-Si high electron mobility transistor (HEMT) with a 1702 V breakdown voltage (BV) and low current collapse. The strain and threading dislocation density were well-controlled by 100 pairs of AlN/GaN superlattice buffer layers. Relative to the carbon-doped GaN spacer layer, we grew the AlGaN back barrier layer at a high temperature, resulting in a low carbon-doping concentration. The high-bandgap AlGaN provided an effective barrier for blocking leakage from the channel to substrate, leading to a BV comparable to the ordinary carbon-doped GaN HEMTs. In addition, the AlGaN back barrier showed a low dispersion of transiently pulsed ID under substrate bias, implying that the buffer traps were effectively suppressed. Therefore, we obtained a low-dynamic on-resistance with this AlGaN back barrier. These two approaches of high BV with low current collapse improved the device performance, yielding a device that is reliable in power device applications.

Original languageEnglish
Article number28
JournalElectronics (Switzerland)
Volume5
Issue number2
DOIs
StatePublished - 1 Jun 2016

Keywords

  • Current collapse
  • GaN
  • High electron mobility transistor (HEMT)

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