An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate

S. C. Chen*, J. C. Lou, Chao-Hsin Chien, Po-Tsun Liu, T. C. Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

In this study, the hump in the capacitance-voltage (C-V) curves, variation of leakage current, interfacial layer increase, and electron trapping in non-surface treated hafnium oxide (HfO2) samples were observed and investigated. From the results of the investigation, it was found that both rapid thermal oxidation and NH3 surface treatments improved the C-V curves. In addition, it was observed that samples treated with ammonia exhibited a lower leakage current when compared with the others. From the results of the dielectric leakage current study, a severe electron trapping effect was exhibited under higher electric field stress. Finally, the conduction mechanism in the HfO2 thin film was dominated by Frenkel-Poole emission in a high electric field.

Original languageEnglish
Pages (from-to)167-172
Number of pages6
JournalThin Solid Films
Volume488
Issue number1-2
DOIs
StatePublished - 22 Sep 2005

Keywords

  • Dielectrics
  • Electrical properties and measurements
  • Surface and interface state
  • Transmission electron microscopy (TEM)

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