An integral contact process in submicron technology

Yu Hua Lee*, Bing-Yue Tsui

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

A test pattern to monitor the outgassing of boron and phosphorous in boron phosphorous silicon glass (BPSG) films was developed. The outgassing effect on the etching rates was studied by varying the reflow temperature in a nitrogen atmosphere. The wet etching rate reduced effectively and improved the contact profile due to loss of the phosphorous near the BPSG surface. The contact process was used for the mass production of dynamic random access storage (DRAM) devices.

Original languageEnglish
Pages (from-to)222-233
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2636
DOIs
StatePublished - 1 Dec 1995
EventMicroelectronic Device and Multilevel Interconnection Technology - Austin, TX, United States
Duration: 25 Oct 199526 Oct 1995

Fingerprint Dive into the research topics of 'An integral contact process in submicron technology'. Together they form a unique fingerprint.

Cite this