An integral contact process in submicron technology

Yu Hua Lee; Bing-Yue Tsui

doi:10.1117/12.221136

An integral contact process in submicron technology

Yu Hua Lee^*, Bing-Yue Tsui

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Conference article › peer-review

Abstract

A test pattern to monitor the outgassing of boron and phosphorous in boron phosphorous silicon glass (BPSG) films was developed. The outgassing effect on the etching rates was studied by varying the reflow temperature in a nitrogen atmosphere. The wet etching rate reduced effectively and improved the contact profile due to loss of the phosphorous near the BPSG surface. The contact process was used for the mass production of dynamic random access storage (DRAM) devices.

Original language	English
Pages (from-to)	222-233
Number of pages	12
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2636
DOIs	https://doi.org/10.1117/12.221136
State	Published - 1 Dec 1995
Event	Microelectronic Device and Multilevel Interconnection Technology - Austin, TX, United States Duration: 25 Oct 1995 → 26 Oct 1995

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title = "An integral contact process in submicron technology",

abstract = "A test pattern to monitor the outgassing of boron and phosphorous in boron phosphorous silicon glass (BPSG) films was developed. The outgassing effect on the etching rates was studied by varying the reflow temperature in a nitrogen atmosphere. The wet etching rate reduced effectively and improved the contact profile due to loss of the phosphorous near the BPSG surface. The contact process was used for the mass production of dynamic random access storage (DRAM) devices.",

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year = "1995",

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AU - Tsui, Bing-Yue

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AB - A test pattern to monitor the outgassing of boron and phosphorous in boron phosphorous silicon glass (BPSG) films was developed. The outgassing effect on the etching rates was studied by varying the reflow temperature in a nitrogen atmosphere. The wet etching rate reduced effectively and improved the contact profile due to loss of the phosphorous near the BPSG surface. The contact process was used for the mass production of dynamic random access storage (DRAM) devices.

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U2 - 10.1117/12.221136

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M3 - Conference article

AN - SCOPUS:0029419186

VL - 2636

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

Y2 - 25 October 1995 through 26 October 1995

ER -

An integral contact process in submicron technology

Abstract

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