A test pattern to monitor the outgassing of boron and phosphorous in boron phosphorous silicon glass (BPSG) films was developed. The outgassing effect on the etching rates was studied by varying the reflow temperature in a nitrogen atmosphere. The wet etching rate reduced effectively and improved the contact profile due to loss of the phosphorous near the BPSG surface. The contact process was used for the mass production of dynamic random access storage (DRAM) devices.
|Number of pages||12|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - 1 Dec 1995|
|Event||Microelectronic Device and Multilevel Interconnection Technology - Austin, TX, United States|
Duration: 25 Oct 1995 → 26 Oct 1995