An innovative understanding of metal-insulator-metal (MIM)-capacitor degradation under constant-current stress

Chi Chao Hung*, Anthony S. Oates, Horng-Chih Lin, Yu En Percy Chang, Jia Lian Wang, Huang-Chung Cheng, You Wen Yau

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

This paper provides a new understanding of metal-insulator-metal-capacitor- degradation behavior under a wide range of constant-current-stress conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress-current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current and reverses after a certain period of time. A metal-insulator interlayer is observed using cross-sectional transmission-electron-microscopy micrographs, which possibly explains this reversal phenomenon.

Original languageEnglish
Pages (from-to)462-466
Number of pages5
JournalIEEE Transactions on Device and Materials Reliability
Volume7
Issue number3
DOIs
StatePublished - 1 Sep 2007

Keywords

  • Capacitance
  • Constant-current stress (CCS)
  • Interface
  • Metal-insulator-metal (MIM)

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