An improved two-frequency method of capacitance measurement for SrTiO 3 as high-k gate dielectric

Hang Ting Lue*, Chih Yi Liu, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

63 Scopus citations

Abstract

An improved two-frequency method of capacitance measurement for the high-k gate dielectrics is proposed. The equivalent circuit model of the MOS capacitor including the four parameters of intrinsic capacitance, loss tangent, parasitic series inductance, and series resistance is developed. These parameters can he extracted by independently measuring the capacitor at two different frequencies. This technique is demonstrated for high-k SrTiO 3 gate dielectrics and the results show that the calibrated capacitances are invariant over a wide range of frequency. In addition, the extracted loss tangent, inductance and resistance are independent on gate voltage and frequency. The effect of series resistance on the frequency dispersion of the capacitance can be also explained by this model. These results indicate that this modified technique can be incorporated in the routine capacitance-voltage (C-V) measurement procedure providing the physically meaningful data for the high-k gate dielectrics.

Original languageEnglish
Pages (from-to)553-555
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number9
DOIs
StatePublished - 1 Sep 2002

Keywords

  • Capacitance measurement
  • Frequency dispersion
  • MOS capacitor
  • STO gate dielectric

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