An impact ionization model for SOI circuit simulation was discussed. This model was based on the thermal activation energy theory to capture the SOI device characteristics. The results show that the impact of current kink at low VD become increasingly important in SOI MOSFETs with power supply scaling below 1.2V.
|Number of pages||2|
|State||Published - 1 Jan 2002|
|Event||IEEE International SOI Conference - Williamsburg, VA, United States|
Duration: 7 Oct 2002 → 10 Oct 2002
|Conference||IEEE International SOI Conference|
|Period||7/10/02 → 10/10/02|