An impact ionization model for SOI circuit simulation

Pin Su*, S. K.H. Fung, H. Wan, A. Niknejad, M. Chan, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

7 Scopus citations

Abstract

An impact ionization model for SOI circuit simulation was discussed. This model was based on the thermal activation energy theory to capture the SOI device characteristics. The results show that the impact of current kink at low VD become increasingly important in SOI MOSFETs with power supply scaling below 1.2V.

Original languageEnglish
Pages201-202
Number of pages2
StatePublished - 1 Jan 2002
EventIEEE International SOI Conference - Williamsburg, VA, United States
Duration: 7 Oct 200210 Oct 2002

Conference

ConferenceIEEE International SOI Conference
CountryUnited States
CityWilliamsburg, VA
Period7/10/0210/10/02

Fingerprint Dive into the research topics of 'An impact ionization model for SOI circuit simulation'. Together they form a unique fingerprint.

Cite this