An HBT four-cell monolithic stacked power amplifier

Zuo-Min Tsai *, Ming Fong Lei, Huei Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Stacked-device power combining method can simultaneously increase output power and load impedance by raising the bias voltage of the overall circuit. The series-input and series-output configuration is physically realizable for multicell stacked device configuration in monolithic circuits. To prove this concept, a 4-cell stacked power amplifier with series-input and series-output configuration is demonstrated in this paper using 2 μm HBT. Almost no additional matching is required to achieve power match and good return loss. The amplifier shows a measured performance of 14 dB gain at 5 GHz, P1db of 26 dBm and saturation power of 1 W at 4.8 GHz. This is the first demonstration of a fully monolithic 4 cell series stacked amplifier. The ease of design and its overall simplicity suggests that this method can be carried out in many other power applications.

Original languageEnglish
Title of host publication2007 IEEE MTT-S International Microwave Symposium Digest
Pages151-154
Number of pages4
DOIs
StatePublished - 2 Oct 2007
Event2007 IEEE MTT-S International Microwave Symposium, IMS 2007 - Honolulu, HI, United States
Duration: 3 Jun 20078 Jun 2007

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2007 IEEE MTT-S International Microwave Symposium, IMS 2007
CountryUnited States
CityHonolulu, HI
Period3/06/078/06/07

Keywords

  • HBT
  • Power amplifiers

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  • Cite this

    Tsai , Z-M., Lei, M. F., & Wang, H. (2007). An HBT four-cell monolithic stacked power amplifier. In 2007 IEEE MTT-S International Microwave Symposium Digest (pp. 151-154). [4263765] (IEEE MTT-S International Microwave Symposium Digest). https://doi.org/10.1109/MWSYM.2007.380312