@inproceedings{9edda8a0cb6946d3a7df49acf6e9b91e,
title = "An HBT four-cell monolithic stacked power amplifier",
abstract = "Stacked-device power combining method can simultaneously increase output power and load impedance by raising the bias voltage of the overall circuit. The series-input and series-output configuration is physically realizable for multicell stacked device configuration in monolithic circuits. To prove this concept, a 4-cell stacked power amplifier with series-input and series-output configuration is demonstrated in this paper using 2 μm HBT. Almost no additional matching is required to achieve power match and good return loss. The amplifier shows a measured performance of 14 dB gain at 5 GHz, P1db of 26 dBm and saturation power of 1 W at 4.8 GHz. This is the first demonstration of a fully monolithic 4 cell series stacked amplifier. The ease of design and its overall simplicity suggests that this method can be carried out in many other power applications.",
keywords = "HBT, Power amplifiers",
author = "Zuo-Min Tsai and Lei, {Ming Fong} and Huei Wang",
year = "2007",
month = oct,
day = "2",
doi = "10.1109/MWSYM.2007.380312",
language = "English",
isbn = "1424406889",
series = "IEEE MTT-S International Microwave Symposium Digest",
pages = "151--154",
booktitle = "2007 IEEE MTT-S International Microwave Symposium Digest",
note = "null ; Conference date: 03-06-2007 Through 08-06-2007",
}