An Extreme Surface Proximity Push for Embedded SiGe in pMOSFETs Featuring Self-Aligned Silicon Reflow

Da Wen Lin, Chien Cheng Liang, Ming-Jer Chen, Chung-Cheng Wu

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

This letter proposes a novel process to modulate the distance, or proximity, between the tip of embedded silicon-germanium (e-SiGe) and the channel region in pMOSFETs. Traditionally, sophisticated etching treatment is adopted in a spacer structure; however, process-induced variation in the e-SiGe proximity may lead to serious variation in pMOSFET performance. In this letter, an extremely close proximity is achieved using self-aligned silicon reflow (SASR) in hydrogen ambient. As opposed to conventional approaches which have e-SiGe proximity determined by spacer width, the tip of e-SiGe with SASR can be positioned flush with the gate edge, as corroborated by both the TEM analyses and TCAD simulation. A significant improvement in pMOSFET performance is also measured.
Original languageEnglish
Pages (from-to)924-926
Number of pages3
JournalIEEE Electron Device Letters
DOIs
StatePublished - Sep 2010

Keywords

  • Embedded silicon-germanium (e-SiGe); MOSFET; reflow; self-aligned; strain
  • LOGIC; TRANSFORMATION; TECHNOLOGY; HYDROGEN

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