An extraction method of charge trapping site distribution in AlGaN layer in GaN HEMT

T. Baba, K. Kakushima, H. Wakabayashi, K. Tsutsui, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The density and distribution of electron traps in AlGaN layer of GaN HEMT have been characterized. Based on electron tunneling between 2DEG and trap sites, the distance and density can be extracted with frequency dependent capacitance and conductance responses. With parameter fitting to measured capacitance and conductance spectra, a trap density of Nbt = 1021 cm-3eV-1 has be extracted. With different gate voltage or measurement temperature, the trap distribution within the AlGaN layer can be extracted under the same frequency range. From measurement temperature dependency, a capture cross section σ0 = 8 × 10-10 cm2 with an activation energy of 0.42 eV has been extracted.

Original languageEnglish
Title of host publicationWiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages125-128
Number of pages4
ISBN (Electronic)9781467378857
DOIs
StatePublished - 30 Dec 2015
Event3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015 - Blacksburg, United States
Duration: 2 Nov 20154 Nov 2015

Publication series

NameWiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications

Conference

Conference3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015
CountryUnited States
CityBlacksburg
Period2/11/154/11/15

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