Abstract
An extended-gate field-effect transistor (EGFET) with low-temperature hydrothermally synthesized SnO 2 nanorods as the pH sensor was demonstrated for the first time. The SnO 2 nanorod sensor exhibited the higher sensitivity of 55.18 mV/pH and larger linearity of 0.9952 in the wide sensing range of pH 1-13 with respect to the thin-film one. The nearly 15% sensitivity enhancement for such a sensor was attributed to the high surface-to-volume ratio of the nanorod structure, reflecting larger effective sensing areas. The characteristics of the output voltage versus sensing time also indicated good reliability and durability for the SnO 2 nanorod sensor. Furthermore, the hysteresis was only 3.69 mV after the solution was changed as pH7 → pH3 → pH7 → pH11 → pH7.
Original language | English |
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Article number | 6291743 |
Pages (from-to) | 1495-1497 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 33 |
Issue number | 10 |
DOIs | |
State | Published - 7 Sep 2012 |
Keywords
- Extended-gate field-effect transistor (EGFET)
- hydrothermal method
- pH sensor
- SnO nanorods