An extended-gate field-effect transistor with low-temperature hydrothermally synthesized SnO 2 nanorods as pH sensor

Hung Hsien Li*, Wei Syuan Dai, Jung Chuan Chou, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

An extended-gate field-effect transistor (EGFET) with low-temperature hydrothermally synthesized SnO 2 nanorods as the pH sensor was demonstrated for the first time. The SnO 2 nanorod sensor exhibited the higher sensitivity of 55.18 mV/pH and larger linearity of 0.9952 in the wide sensing range of pH 1-13 with respect to the thin-film one. The nearly 15% sensitivity enhancement for such a sensor was attributed to the high surface-to-volume ratio of the nanorod structure, reflecting larger effective sensing areas. The characteristics of the output voltage versus sensing time also indicated good reliability and durability for the SnO 2 nanorod sensor. Furthermore, the hysteresis was only 3.69 mV after the solution was changed as pH7 → pH3 → pH7 → pH11 → pH7.

Original languageEnglish
Article number6291743
Pages (from-to)1495-1497
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number10
DOIs
StatePublished - 7 Sep 2012

Keywords

  • Extended-gate field-effect transistor (EGFET)
  • hydrothermal method
  • pH sensor
  • SnO nanorods

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