An extended-gate field-effect transistor with low-temperature hydrothermally synthesized SnO 2 nanorods as pH sensor

Hung Hsien Li; Wei Syuan Dai; Jung Chuan Chou; Huang-Chung Cheng

doi:10.1109/LED.2012.2210274

An extended-gate field-effect transistor with low-temperature hydrothermally synthesized SnO ₂ nanorods as pH sensor

Hung Hsien Li^*, Wei Syuan Dai, Jung Chuan Chou, Huang-Chung Cheng

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

An extended-gate field-effect transistor (EGFET) with low-temperature hydrothermally synthesized SnO ₂ nanorods as the pH sensor was demonstrated for the first time. The SnO ₂ nanorod sensor exhibited the higher sensitivity of 55.18 mV/pH and larger linearity of 0.9952 in the wide sensing range of pH 1-13 with respect to the thin-film one. The nearly 15% sensitivity enhancement for such a sensor was attributed to the high surface-to-volume ratio of the nanorod structure, reflecting larger effective sensing areas. The characteristics of the output voltage versus sensing time also indicated good reliability and durability for the SnO ₂ nanorod sensor. Furthermore, the hysteresis was only 3.69 mV after the solution was changed as pH7 → pH3 → pH7 → pH11 → pH7.

Original language	English
Article number	6291743
Pages (from-to)	1495-1497
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	10
DOIs	https://doi.org/10.1109/LED.2012.2210274
State	Published - 7 Sep 2012

Keywords

Extended-gate field-effect transistor (EGFET)
hydrothermal method
pH sensor
SnO nanorods

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abstract = "An extended-gate field-effect transistor (EGFET) with low-temperature hydrothermally synthesized SnO 2 nanorods as the pH sensor was demonstrated for the first time. The SnO 2 nanorod sensor exhibited the higher sensitivity of 55.18 mV/pH and larger linearity of 0.9952 in the wide sensing range of pH 1-13 with respect to the thin-film one. The nearly 15% sensitivity enhancement for such a sensor was attributed to the high surface-to-volume ratio of the nanorod structure, reflecting larger effective sensing areas. The characteristics of the output voltage versus sensing time also indicated good reliability and durability for the SnO 2 nanorod sensor. Furthermore, the hysteresis was only 3.69 mV after the solution was changed as pH7 → pH3 → pH7 → pH11 → pH7.",

keywords = "Extended-gate field-effect transistor (EGFET), hydrothermal method, pH sensor, SnO nanorods",

author = "Li, {Hung Hsien} and Dai, {Wei Syuan} and Chou, {Jung Chuan} and Huang-Chung Cheng",

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AU - Cheng, Huang-Chung

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AB - An extended-gate field-effect transistor (EGFET) with low-temperature hydrothermally synthesized SnO 2 nanorods as the pH sensor was demonstrated for the first time. The SnO 2 nanorod sensor exhibited the higher sensitivity of 55.18 mV/pH and larger linearity of 0.9952 in the wide sensing range of pH 1-13 with respect to the thin-film one. The nearly 15% sensitivity enhancement for such a sensor was attributed to the high surface-to-volume ratio of the nanorod structure, reflecting larger effective sensing areas. The characteristics of the output voltage versus sensing time also indicated good reliability and durability for the SnO 2 nanorod sensor. Furthermore, the hysteresis was only 3.69 mV after the solution was changed as pH7 → pH3 → pH7 → pH11 → pH7.

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