An exercise of ET/UTBB SOI CMOS modeling and simulation with BSIM-IMG

Qiang Chen*, Xinghua Zhong, Yanjun Wu, Nengyong Zhu, Wei Huang, Darsen Lu, Chen-Ming Hu, Bich Yen Nguyen, Olivier Faynot

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

This paper presents an exploratory application of BSIM-IMG (May/2011-release) to ET/UTBB SOI MOSFET modeling and circuit simulations. Compliance with fundamental compact model requirements and physical scalability with respect to technology parameters in BSIM-IMG are analyzed. BSIM-IMG model parameters are extracted on a 20nm technology. Simulation results are presented both for conventional benchmark and ET/UTBB SOI specific circuits.

Original languageEnglish
Title of host publicationIEEE International SOI Conference, SOI 2011
DOIs
StatePublished - 20 Dec 2011
Event2011 IEEE International SOI Conference, SOI 2011 - Tempe, AZ, United States
Duration: 3 Oct 20116 Oct 2011

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Conference

Conference2011 IEEE International SOI Conference, SOI 2011
CountryUnited States
CityTempe, AZ
Period3/10/116/10/11

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