An exact analytic model of undoped body MOSFETs using the SPP approach

Jin He*, Xuemei Xi, Mansun Chan, Ali Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

An exact analytic model for undoped (or lightly doped) body MOSFETs has been derived in this paper by incorporating the mobile charge density in the 1-D Poisson's equation. The formulation starts with deriving a close form solution that relates the channel band bending and inversion charge to gate and channel voltage using Gauss's law and the gradient equation of the field effect devices. A continuous current-voltage model is then developed based on the exaction solution to the channel charge. The preliminary model has been verified by comparing with long channel results generated by 2-D simulator. Very good agreements in all operation regions from sub-threshold to strong inversion, and from linear to saturation are obtained. By using simple geometry parameter alone, the model is capable to capture all features obtained from 2-D device simulator.

Original languageEnglish
Title of host publication2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
EditorsM. Laudon, B. Romanowicz
Pages128-131
Number of pages4
StatePublished - 2 Nov 2004
Event2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States
Duration: 7 Mar 200411 Mar 2004

Publication series

Name2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Volume2

Conference

Conference2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
CountryUnited States
CityBoston, MA
Period7/03/0411/03/04

Keywords

  • Charge carrier density
  • Compact modeling
  • Surface-potential- plus
  • Undoped MOSFET

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