An epitaxial emitter cap, SiGe-base bipolar technology with 22 ps ECL gate delay at liquid nitrogen temperature

John D. Cresslcr, James H. Comfort, Emmanuel F. Crabbe, Jack Y.C. Sun, Johannes M.C. Slork

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

We have presented a SiGc-basc bipolar technology which has faster circuit speed at liquid nitrogen temperature than at room temperature. Transistors were fabricated using a reduced-temperature process employing a novel in-situ doped polysilicon emitter contact, a lightly doped epitaxial emitter cap layer, and a graded SiGe base. Transistors have a current gain as high as 500 with a cutoff frequency (fT) of 61 GHz, up from 43 GHz at 300 K. ECL circuits switch at a record 21.9 ps at 84 K at Jcs=1.0 mA/μm2 (25.4 ps at 310 K). For completeness the low-temperature properties of this technology are compared with more conventional ipi and pi SiGe-base designs.

Original languageEnglish
Title of host publication1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages102-103
Number of pages2
ISBN (Electronic)0780306988
DOIs
StatePublished - 1992
Event1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992 - Seattle, United States
Duration: 2 Jun 19924 Jun 1992

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume1992-June
ISSN (Print)0743-1562

Conference

Conference1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992
CountryUnited States
CitySeattle
Period2/06/924/06/92

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