An energy-efficient and high-speed mobile memory I/O interface using simultaneous Bi-directional dual (base+RF)-band signaling

Gyung Su Byun*, Yanghyo Kim, Jongsun Kim, Sai Wang Tam, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

32 Scopus citations

Abstract

A fully-integrated 8.4 Gb/s 2.5 pJ/b mobile memory I/O transceiver using simultaneous bidirectionaldual band signaling is presented. Incorporating both RF-band and baseband transceiver designs, this prototype demonstrates an energy-efficient and high-bandwidth solution for future mobile memory I/O interface. The proposed amplitude shift keying (ASK) modulator/demodulator with on-chip band-selective transformer obviates a power hungry pre-emphasis and equalization circuitry, revealing a low-power, compact and standard mobile memory-compatible solution. Designed and fabricated in 65-nm CMOS technology, each RF-band and baseband transceiver consumes 10.5 mW and 11 mW and occupies 0.08 mm 2 and 0.06 mm 2 die area, respectively. The dual-band transceiver achieves error-free operation (BER < 10 -15 ) with 2 23-1 PRBS at 8.4 Gb/s over a distance of 10 cm.

Original languageEnglish
Article number6025221
Pages (from-to)117-130
Number of pages14
JournalIEEE Journal of Solid-State Circuits
Volume47
Issue number1
DOIs
StatePublished - 1 Jan 2012

Keywords

  • Amplitude-shift-keying (ASK)
  • dual-band signaling
  • impedance
  • mobile memory interface
  • multi-band RF-Interconnect (RF-I)
  • simultaneous bidirectionaltransformation

Fingerprint Dive into the research topics of 'An energy-efficient and high-speed mobile memory I/O interface using simultaneous Bi-directional dual (base+RF)-band signaling'. Together they form a unique fingerprint.

  • Cite this