An endurance evaluation method for flash EEPROM

Nian Kai Zous*, Yin Jen Chen, Chi Yuan Chin, Wen Jer Tsai, Tao Cheng Lu, Ming Shiang Chen, Wen Pin Lu, Ta-Hui Wang, Samuel C. Pan, Chih Yuan Lu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Trap generation is hard to estimate in a Flash cell due to a dynamic stress field during program and erase. In this paper, a linear correlation is found between the erase state VT rollup and cycling VT window. With the knowledge of the time dependence of erase stress field based on Fowler-Nordheim (FN) tunneling, the VT rollup cycling is evaluated by incorporating field dependent oxide trap generation. The extracted ΔVT degradation slope during constant FN stress can be applied quantitatively to predict the VT window closure during Flash cell cycling.

Original languageEnglish
Pages (from-to)720-725
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number5
StatePublished - 1 May 2004


  • Dynamic stress
  • Evaluation method
  • Flash EEPROM
  • Tunnel oxide

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