An empirical defect-related photo leakage current model for LTPS TFTs based on the Unit Lux Current

Ya-Hsiang Tai*, Yan Fu Kuo, Guo Pei Sun

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this paper, the photosensitive effect of n-type low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) after dc stress is analyzed. It is found that the illumination behaviors for poly-Si TFTs are dependent on the defect types created by different stress conditions of hot-carrier and self-heating effects. For a given stress-induced device degradation, the anomalous illumination behaviors are observed, and these photo-induced leakage currents are not included in the present SPICE device model. Therefore, based on trap-assisted and PooleFrenkel effect, an empirical defect-related photo leakage current model based on Unit Lux Current (ULC) is proposed to depict the photo-induced current after device degradation. Furthermore, the verified equation of ULC is analytically derived and has good agreement with the experimental data.

Original languageEnglish
Article number11
Pages (from-to)1015-1022
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume57
Issue number5
DOIs
StatePublished - 1 May 2010

Keywords

  • DC stress
  • Leakage current
  • Photosensitivity
  • Poly-Si thin-film transistor (TFT)

Fingerprint Dive into the research topics of 'An empirical defect-related photo leakage current model for LTPS TFTs based on the Unit Lux Current'. Together they form a unique fingerprint.

Cite this