An Electromigration Failure Model for Interconnects Under Pulsed and Bidirectional Current Stressing

Jiang Tao, Nathan W. Cheung, Chen-Ming Hu

Research output: Contribution to journalArticle

48 Scopus citations

Abstract

used to project the electromigration lifetime under pulsed dc and ac current stressing has been reported. The experimental results indicate that different metallization systems (Al-2%Si, Al-4%Cu/TiW, and Cu) show similar failure behaviors, which can be explained and predicted by this model. The pulsed dc lifetime is found to be longer than dc lifetime, and the ac lifetime is found to be very much longer. This recognition can provide significant relief to circuit designs involving metals carrying pulsed dc and ac currents, and allow a more aggressive design to improve circuit density and speed. An electromigration failure model which can be.

Original languageEnglish
Pages (from-to)539-545
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume41
Issue number4
DOIs
StatePublished - 1 Jan 1994

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