An electrochemical dopamine sensor with a CMOS detection circuit

Feng Lin Chan, Wen Ying Chang, Li Min Kuo, Chih Heng Lin, Shi Wei Wang, Yuh-Shyong Yang, Michael S.C. Lu

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


This paper presents the integration of interdigitated microelectrodes and a CMOS circuit for electrochemical sensing of the neurotransmitter dopamine. Gold electrodes with a gap of 3 νm are fabricated by the lift-off technique. The CMOS sensing circuit has a current gain of 10, an integrating capacitor of 4 pF, and a measured dynamic range of 60 dB. The applied reduction and oxidation potentials are determined by voltammetry at about -0.2 V and 0.6 V, respectively. The measured collection efficiency can reach up to 84%. The produced oxidation current with respect to dopamine concentration averages 0.44 nA νM-1.

Original languageEnglish
Article number075028
JournalJournal of Micromechanics and Microengineering
Issue number7
StatePublished - Jul 2008

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