An efficient method for characterizing time-evolutional interface state and its correlation with the device degradation in LDD n-MOSFET's

Robert Giahn Horng Lee*, Jiunn Pey Wu, Steve S. Chung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

A new characterization method is proposed to study the relationship between the hot-carrier-induced interface state Nit (x) and the device drain current degradation of submicron LDD n-MOSFET's. In this method, by making use of the conventional charge pumping measurement in combination with the power-law dependence of interface damages on stress time, the spatial distribution Nit(x) and the effective damaged length Ldam can be easily extracted. The time evolution of the interface state generation and its correlation with the device degradation can then be well explained. It is worthwhile to note that this newly-developed method requires no repetitive charge pumping measurements, and hence avoids he likely imposition of re-stress on tested devices. By combining the characterized Ldam and Nit quantitatively, the results show that the damage at VGS ≈ VDS/2 is most highly localized among various stress biases, which can explain why the generated interface states will dominate the device drain current degradation at this bias after long-term operating conditions.

Original languageEnglish
Pages (from-to)898-903
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume43
Issue number6
DOIs
StatePublished - 1 Dec 1996

Fingerprint Dive into the research topics of 'An efficient method for characterizing time-evolutional interface state and its correlation with the device degradation in LDD n-MOSFET's'. Together they form a unique fingerprint.

Cite this