An efficient and accurate compact model for thin-oxide-mosfet intrinsic capacitance considering the finite charge layer thickness

Weidong Liu*, Xiaodong Jin, Yachin King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

As the gate oxide thickness is vigorously scaled down quantization-induced charge layer thickness in MOSFET's has to be considered for accurate MOSFET intrinsic capacitance modeling for circuit simulation. We report in this paper an analytical MOSFET intrinsic capacitance model incorporating the concept of charge layer thickness which was developed based on the self-consistent solution of the Schrodinger and Poisson equations with Fermi-Dirac statistics. The results demonstrate that this model has excellent accuracy and simulation performance.

Original languageEnglish
Pages (from-to)1070-1072
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume46
Issue number5
DOIs
StatePublished - 1 Dec 1999

Keywords

  • Capacitance
  • Charge layer thickness
  • Mosfet model
  • Quantum effect

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