@inproceedings{03ab1a36cf7141a9874b6150c369a4b4,
title = "An Au-free GaN high electron mobility transistor with Ti/Al/W Ohmic metal structure",
abstract = "We demonstrate the Au-free GaN HEMT device with the Ti/Al/W Ohmic metal structure. Excellent surface roughness 4.88nm for Ti/Al/W Ohmic stucture was achieved after metallization. The DC characteristics is comparable with conventional HEMTs and the stress performance with high voltage is better than conventional HEMTs.",
author = "Yao, {Jing Neng} and Lin, {Yueh Chin} and Chuang, {Yu Lin} and Huang, {Yu Xiang} and Shih, {Wang Cheng} and Sze, {Simon M.} and Chang, {Edward Yi}",
year = "2015",
month = aug,
day = "25",
doi = "10.1109/IPFA.2015.7224415",
language = "English",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "419--422",
booktitle = "Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015",
address = "United States",
note = "null ; Conference date: 29-06-2015 Through 02-07-2015",
}