An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature

Wei Lee*, Pin Su, Hou Yu Chen, Chang Yun Chang, Ke Wei Su, Sally Liu, Fu Liang Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Original languageEnglish
Title of host publication2005 International Semiconductor Device Research Symposium
Pages175-176
Number of pages2
DOIs
StatePublished - 1 Dec 2005
Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: 7 Dec 20059 Dec 2005

Publication series

Name2005 International Semiconductor Device Research Symposium
Volume2005

Conference

Conference2005 International Semiconductor Device Research Symposium
CountryUnited States
CityBethesda, MD
Period7/12/059/12/05

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