For charge-sensitive infrared phototransistors (CSIP), it is observed that 'conductance decrease,' which is contrary to the standard 'conductance increase' photon response, can also happen after absorbing infrared light. By experimental modeling the charge-up detection mechanism of CSIP via a capacitive way, we clarify that 'conductance decrease' should be attributed to the significantly reduced low quantum well electron mobility after the photon-charging process, rather than a reversed electron transfer. This experimental result clearly indicates that photon-induced charges are able to modify the electron mobility in those 'charge-sensitive sensor' types of semiconductor quantum single-photon detectors.
|Journal||IEEE Journal on Selected Topics in Quantum Electronics|
|State||Published - 11 Feb 2013|
- double quantum well