An anomalous conductance decrease in charge sensitive infrared phototransistor

Ting Ting Kang*, Susumu Komiyama, Takeji Ueda, Shi Wei Lin, Sheng-Di Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


For charge-sensitive infrared phototransistors (CSIP), it is observed that 'conductance decrease,' which is contrary to the standard 'conductance increase' photon response, can also happen after absorbing infrared light. By experimental modeling the charge-up detection mechanism of CSIP via a capacitive way, we clarify that 'conductance decrease' should be attributed to the significantly reduced low quantum well electron mobility after the photon-charging process, rather than a reversed electron transfer. This experimental result clearly indicates that photon-induced charges are able to modify the electron mobility in those 'charge-sensitive sensor' types of semiconductor quantum single-photon detectors.

Original languageEnglish
Article number6172643
JournalIEEE Journal on Selected Topics in Quantum Electronics
Issue number1
StatePublished - 11 Feb 2013


  • Charge
  • detector
  • double quantum well
  • infrared
  • mobility
  • phototransistor

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