An Al2O3 AlGaAs/InGaAs metal-oxide-semiconductor phemt spdt switch with low control currents for wireless communication applications

Yun Chi Wu; Yueh Chin Lin; Edward Yi Chang; C. T. Lee; Chi Chung Kei; Chia Ta Chang; Heng-Tung Hsu

doi:10.1149/1.3380967

An Al₂O₃ AlGaAs/InGaAs metal-oxide-semiconductor phemt spdt switch with low control currents for wireless communication applications

Yun Chi Wu^*, Yueh Chin Lin, Edward Yi Chang, C. T. Lee, Chi Chung Kei, Chia Ta Chang, Heng-Tung Hsu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

An AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) single-pole-double-throw (SPDT) switch using Al₂ O₃ high- κ gate dielectric by atomic layer deposition is fabricated. The MOS-PHEMT exhibited a comparable dc performance and a much lower gate current compared to PHEMT. Radio-frequency (rf) test shows that the MOS-PHEMT switch has an insertion loss of less than 0.5 dB, an isolation larger than 30 dB, a return loss larger than 15 dB, and an input power for 1 dB compression of 31.4 dBm at 2.5 GHz. Overall, MOS-PHEMT monolithic microwave integrated circuits switches have comparable rf performance to PHEMT switches but with much lower dc power consumption.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	6
DOIs	https://doi.org/10.1149/1.3380967
State	Published - 27 Apr 2010

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@article{22987ad52b804fd9929cbe99dd858f95,

title = "An Al2O3 AlGaAs/InGaAs metal-oxide-semiconductor phemt spdt switch with low control currents for wireless communication applications",

abstract = "An AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) single-pole-double-throw (SPDT) switch using Al2 O3 high- κ gate dielectric by atomic layer deposition is fabricated. The MOS-PHEMT exhibited a comparable dc performance and a much lower gate current compared to PHEMT. Radio-frequency (rf) test shows that the MOS-PHEMT switch has an insertion loss of less than 0.5 dB, an isolation larger than 30 dB, a return loss larger than 15 dB, and an input power for 1 dB compression of 31.4 dBm at 2.5 GHz. Overall, MOS-PHEMT monolithic microwave integrated circuits switches have comparable rf performance to PHEMT switches but with much lower dc power consumption.",

author = "Wu, {Yun Chi} and Lin, {Yueh Chin} and Chang, {Edward Yi} and Lee, {C. T.} and Kei, {Chi Chung} and Chang, {Chia Ta} and Heng-Tung Hsu",

year = "2010",

month = apr,

day = "27",

doi = "10.1149/1.3380967",

language = "English",

volume = "13",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "6",

}

An Al₂O₃ AlGaAs/InGaAs metal-oxide-semiconductor phemt spdt switch with low control currents for wireless communication applications. / Wu, Yun Chi; Lin, Yueh Chin; Chang, Edward Yi; Lee, C. T.; Kei, Chi Chung; Chang, Chia Ta; Hsu, Heng-Tung.

In: Electrochemical and Solid-State Letters, Vol. 13, No. 6, 27.04.2010.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - An Al2O3 AlGaAs/InGaAs metal-oxide-semiconductor phemt spdt switch with low control currents for wireless communication applications

AU - Wu, Yun Chi

AU - Lin, Yueh Chin

AU - Chang, Edward Yi

AU - Lee, C. T.

AU - Kei, Chi Chung

AU - Chang, Chia Ta

AU - Hsu, Heng-Tung

PY - 2010/4/27

Y1 - 2010/4/27

N2 - An AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) single-pole-double-throw (SPDT) switch using Al2 O3 high- κ gate dielectric by atomic layer deposition is fabricated. The MOS-PHEMT exhibited a comparable dc performance and a much lower gate current compared to PHEMT. Radio-frequency (rf) test shows that the MOS-PHEMT switch has an insertion loss of less than 0.5 dB, an isolation larger than 30 dB, a return loss larger than 15 dB, and an input power for 1 dB compression of 31.4 dBm at 2.5 GHz. Overall, MOS-PHEMT monolithic microwave integrated circuits switches have comparable rf performance to PHEMT switches but with much lower dc power consumption.

AB - An AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) single-pole-double-throw (SPDT) switch using Al2 O3 high- κ gate dielectric by atomic layer deposition is fabricated. The MOS-PHEMT exhibited a comparable dc performance and a much lower gate current compared to PHEMT. Radio-frequency (rf) test shows that the MOS-PHEMT switch has an insertion loss of less than 0.5 dB, an isolation larger than 30 dB, a return loss larger than 15 dB, and an input power for 1 dB compression of 31.4 dBm at 2.5 GHz. Overall, MOS-PHEMT monolithic microwave integrated circuits switches have comparable rf performance to PHEMT switches but with much lower dc power consumption.

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U2 - 10.1149/1.3380967

DO - 10.1149/1.3380967

M3 - Article

AN - SCOPUS:77951190758

VL - 13

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 6

ER -

An Al2O3 AlGaAs/InGaAs metal-oxide-semiconductor phemt spdt switch with low control currents for wireless communication applications

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An Al₂O₃ AlGaAs/InGaAs metal-oxide-semiconductor phemt spdt switch with low control currents for wireless communication applications