An AlGaAs/InGaAs HEMT grown on Si substrate with Ge/GexSil-x metamorphic buffer layers

Edward Yi Chang, Yueh Chin Lin, Yu Lin Hsiao, Y. C. Hsieh, Chia Yuan Chang, Chien I. Kuo, Guang Li Luo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An AlGaAs/InGaAs HEMT grown on Si substrate with Ge/GexS 1-x buffer is demonstrated. The Ge/GexS1-x metamorphic buffer layer used in this structure was only 1.0 μm thick. The electron mobility in the In0.18Ga0.82As channel of the HEMT sample was 3,550 cm2/Vs. After fabrication, the HEMT device demonstrated a saturation current of 150 mA/mm and a maximum transconductance of 155 mS/mm. The well behaved characteristics of the HEMT device on the Si substrate are believed to be due to the very thin buffer layer achieved and the lack of the antiphase boundaries (APBs) formation and Ge diffusion into the GaAs layers.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings - Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates
Pages217-221
Number of pages5
StatePublished - 18 Dec 2008
EventAdvances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates - San Francisco, CA, United States
Duration: 24 Mar 200828 Mar 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1068
ISSN (Print)0272-9172

Conference

ConferenceAdvances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates
CountryUnited States
CitySan Francisco, CA
Period24/03/0828/03/08

Keywords

  • GaAs on Si
  • HEMT
  • SiGe buffer layer

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    Chang, E. Y., Lin, Y. C., Hsiao, Y. L., Hsieh, Y. C., Chang, C. Y., Kuo, C. I., & Luo, G. L. (2008). An AlGaAs/InGaAs HEMT grown on Si substrate with Ge/GexSil-x metamorphic buffer layers. In Materials Research Society Symposium Proceedings - Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates (pp. 217-221). (Materials Research Society Symposium Proceedings; Vol. 1068).