An advanced surface-potential-plus MOSFET model

Jin He*, Xuemei Xi, Mansun Chan, Ali Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

17 Scopus citations


Like other surface-potential based model, our surface-potential-plus model starts with charge-sheet approximation, uses the quasi-Fermi-potential to integrate drift and diffusion current and formulates an inversion charge equation that can be analytically solved for given terminal voltage. This eliminates the need for precise computation of the surface potential. Based on the inversion charge solution, a continuous, symmetric and accurate MOS model is developed. Various small dimensional effects including polysilicon depletion, quantum mechanical effects, velocity overshoot, source-side injection limit effect, and quasi ballistic transport of nano-scale MOSFETs are integrated naturally into this model. Comparison with measured data validates the new model. The modeling framework is easily extendable to SOI and double-gate MOSFETs.

Original languageEnglish
Title of host publication2003 Nanotechnology Conference and Trade Show - Nanotech 2003
EditorsM. Laudon, B. Romanowicz
Number of pages4
StatePublished - 1 Dec 2003
Event2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
Duration: 23 Feb 200327 Feb 2003

Publication series

Name2003 Nanotechnology Conference and Trade Show - Nanotech 2003


Conference2003 Nanotechnology Conference and Trade Show - Nanotech 2003
CountryUnited States
CitySan Francisco, CA


  • Compact modeling
  • Mosfets
  • Small dimensional effects
  • Surface-potential-plus model

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