An adaptive, low-cost wear-leveling algorithm for multichannel solid-state disks

Li-Pin Chang*, Tung Yang Chou, Li Chun Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Multilevel flash memory cells double or even triple storage density, producing affordable solid-state disks for end users. As flashmemory endures only limited program-erase cycles, solid-state disks employ wear-leveling methods to prevent any portions of flash memory from being retired prematurely. Modern solid-state disks must consider wear evenness at both block and channel levels. This study first presents a block-level wearlevelingmethod whose design has two new ideas. First, the proposed method reuses the intelligence available in flash-translation layers so it does not require any new data structures. Second, it adaptively tunes the threshold of block-level wear leveling according to the runtime write pattern. This study further introduces a new channel-level wear-leveling strategy, because block-level wear leveling is confined to a channel, but realistic workloads do not evenly write all channels. The proposed method swaps logical blocks among channels for achieving an eventually-even state of channel lifetimes. A series of trace-driven simulations show that ourwear-levelingmethod outperforms existing approaches in terms ofwear evenness and overhead reduction.

Original languageEnglish
Article number55
JournalTransactions on Embedded Computing Systems
Volume13
Issue number3
DOIs
StatePublished - 1 Dec 2013

Keywords

  • Flash memory
  • Solid-state disks
  • Wear leveling

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