@inproceedings{57bc0555336848ee8f7d64b31a59949f,
title = "An accurate model of thin film SOI-MOSFET breakdown voltage",
abstract = "A quantitative model which relates the SOI (silicon-on-insulator) MOSFET breakdown voltage to key parameters such as channel length, SOI film thickness, and gate voltage is presented. The SOI breakdown is caused by electron impact ionization current produced near the drain which is subsequently amplified by a parasitic lateral bipolar transition. This model is based on analytic modeling, quasi-2-D simulation and experimental study of the maximum drain electric field in SOI, and a novel method for measuring the lateral BJT (bipolar junction transistor) current gain beta using GIDL (gate-induced drain leakage) current. It can accurately model the breakdown voltage within 0.2 V for different channel lengths, gate voltages, and SOI film thicknesses.",
keywords = "Analytical models, Breakdown voltage, Current measurement, Electric breakdown, Electrons, Impact ionization, MOSFET circuits, Semiconductor films, Silicon on insulator technology, Transistors",
author = "Jim Chen and Faribon Assaderaghi and Wann, {Hsing Jen} and Ping Ko and Chen-Ming Hu and Peng Cheng and Ray Solomon and Chan, {Tung Yi}",
year = "1991",
month = jan,
day = "1",
doi = "10.1109/IEDM.1991.235333",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "671--674",
booktitle = "International Electron Devices Meeting 1991, IEDM 1991",
address = "United States",
note = "null ; Conference date: 08-12-1991 Through 11-12-1991",
}