An Accurate Model of Subbreakdown Due to Bandto-Band Tunneling and Some Applications

Tetsuo Endoh, Shirota Riichiro, Masaki Momodomi, Fujio Masuoka

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

This paper describes an accurate new model for and a numerical analysis of the subbreakdown phenomenon due to band-to-band tunneling in a thin-gate-oxide n-MOSFET. Results calculated by this model agree well with experimental results. This new model provides a good understanding of the subbreakdown phenomenon. Furthermore, it is shown by this model how to design the distribution of impurity density in the drain region in order to suppress the subbreakdown current.

Original languageEnglish
Pages (from-to)290-296
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume37
Issue number1
DOIs
StatePublished - 1 Jan 1990

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