An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's

Steve S. Chung*, S. J. Chen, C. M. Yih, W. J. Yang, Tien-Sheng Chao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, an accurate criterion has been proposed for reliability evaluation of state-of-the-art deep-submicron S/D extension n-MOSFET's. A new monitor for HC reliability evaluation has been developed using total values of Nit in the effective channel length region, instead of commonly used substrate current(IB), impact ionization rate (ID/IB), or peak/average Nit values. An accurate degradation model has thus been developed based on the Nit distribution and mobility scattering effect. Moreover, this approach has been successfully used to demonstrate the feasibility for gate-engineering studies.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherIEEE
Pages249-252
Number of pages4
ISBN (Print)0780352203
DOIs
StatePublished - 1 Jan 1999
EventProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium - San Diego, CA, USA
Duration: 23 Mar 199925 Mar 1999

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Conference

ConferenceProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium
CitySan Diego, CA, USA
Period23/03/9925/03/99

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  • Cite this

    Chung, S. S., Chen, S. J., Yih, C. M., Yang, W. J., & Chao, T-S. (1999). An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's. In Annual Proceedings - Reliability Physics (Symposium) (pp. 249-252). (Annual Proceedings - Reliability Physics (Symposium)). IEEE. https://doi.org/10.1109/RELPHY.1999.761621