An accurate "decoupled C-V" method for characterizing channel and overlap capacitances of miniaturized MOSFET

Jyh-Chyurn Guo, C. C.H. Hsu, Pole Shang Lin, Steve S. Chung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

A novel "decoupled C-V " technique is proposed to characterize the channel and overlap capacitances of miniaturized MOSFET's. This method successfully DECOUPLES channel capacitance from overlap capacitance in submicron CMOS devices. The intrinsic channel capacitance can be well modeled by the quasi-static C-V theory. It allows the accurate determination of the effective channel length and effective channel doping concentration in submicron channel region. The bias dependence of the extrinsic overlap capacitance is observed to be channel-doping-concentration dependent.

Original languageEnglish
Title of host publication1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages256-260
Number of pages5
ISBN (Electronic)0780309782
DOIs
StatePublished - 1 Jan 1993
Event1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Taipei, Taiwan
Duration: 12 May 199314 May 1993

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993
CountryTaiwan
CityTaipei
Period12/05/9314/05/93

Fingerprint Dive into the research topics of 'An accurate "decoupled C-V" method for characterizing channel and overlap capacitances of miniaturized MOSFET'. Together they form a unique fingerprint.

  • Cite this

    Guo, J-C., Hsu, C. C. H., Lin, P. S., & Chung, S. S. (1993). An accurate "decoupled C-V" method for characterizing channel and overlap capacitances of miniaturized MOSFET. In 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers (pp. 256-260). [263594] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VTSA.1993.263594