An accurate "decoupled C-V" method for characterizing channel and overlap capacitances of miniaturized MOSFET

Jyh-Chyurn Guo; C. C.H. Hsu; Pole Shang Lin; Steve S. Chung

doi:10.1109/VTSA.1993.263594

An accurate "decoupled C-V" method for characterizing channel and overlap capacitances of miniaturized MOSFET

Jyh-Chyurn Guo, C. C.H. Hsu, Pole Shang Lin, Steve S. Chung

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Scopus citations

Abstract

A novel "decoupled C-V " technique is proposed to characterize the channel and overlap capacitances of miniaturized MOSFET's. This method successfully DECOUPLES channel capacitance from overlap capacitance in submicron CMOS devices. The intrinsic channel capacitance can be well modeled by the quasi-static C-V theory. It allows the accurate determination of the effective channel length and effective channel doping concentration in submicron channel region. The bias dependence of the extrinsic overlap capacitance is observed to be channel-doping-concentration dependent.

Original language	English
Title of host publication	1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	256-260
Number of pages	5
ISBN (Electronic)	0780309782
DOIs	https://doi.org/10.1109/VTSA.1993.263594
State	Published - 1 Jan 1993
Event	1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Taipei, Taiwan Duration: 12 May 1993 → 14 May 1993

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)	1930-8868

Conference

Conference	1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993
Country	Taiwan
City	Taipei
Period	12/05/93 → 14/05/93

Access to Document

10.1109/VTSA.1993.263594

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Guo, J-C., Hsu, C. C. H., Lin, P. S., & Chung, S. S. (1993). An accurate "decoupled C-V" method for characterizing channel and overlap capacitances of miniaturized MOSFET. In 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers (pp. 256-260). [263594] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VTSA.1993.263594

Guo, Jyh-Chyurn ; Hsu, C. C.H. ; Lin, Pole Shang ; Chung, Steve S. / An accurate "decoupled C-V" method for characterizing channel and overlap capacitances of miniaturized MOSFET. 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 1993. pp. 256-260 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

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abstract = "A novel {"}decoupled C-V {"} technique is proposed to characterize the channel and overlap capacitances of miniaturized MOSFET's. This method successfully DECOUPLES channel capacitance from overlap capacitance in submicron CMOS devices. The intrinsic channel capacitance can be well modeled by the quasi-static C-V theory. It allows the accurate determination of the effective channel length and effective channel doping concentration in submicron channel region. The bias dependence of the extrinsic overlap capacitance is observed to be channel-doping-concentration dependent.",

author = "Jyh-Chyurn Guo and Hsu, {C. C.H.} and Lin, {Pole Shang} and Chung, {Steve S.}",

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Guo, J-C, Hsu, CCH, Lin, PS & Chung, SS 1993, An accurate "decoupled C-V" method for characterizing channel and overlap capacitances of miniaturized MOSFET. in 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers., 263594, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 256-260, 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993, Taipei, Taiwan, 12/05/93. https://doi.org/10.1109/VTSA.1993.263594

An accurate "decoupled C-V" method for characterizing channel and overlap capacitances of miniaturized MOSFET. / Guo, Jyh-Chyurn; Hsu, C. C.H.; Lin, Pole Shang; Chung, Steve S.

1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 1993. p. 256-260 263594 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Lin, Pole Shang

AU - Chung, Steve S.

PY - 1993/1/1

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N2 - A novel "decoupled C-V " technique is proposed to characterize the channel and overlap capacitances of miniaturized MOSFET's. This method successfully DECOUPLES channel capacitance from overlap capacitance in submicron CMOS devices. The intrinsic channel capacitance can be well modeled by the quasi-static C-V theory. It allows the accurate determination of the effective channel length and effective channel doping concentration in submicron channel region. The bias dependence of the extrinsic overlap capacitance is observed to be channel-doping-concentration dependent.

AB - A novel "decoupled C-V " technique is proposed to characterize the channel and overlap capacitances of miniaturized MOSFET's. This method successfully DECOUPLES channel capacitance from overlap capacitance in submicron CMOS devices. The intrinsic channel capacitance can be well modeled by the quasi-static C-V theory. It allows the accurate determination of the effective channel length and effective channel doping concentration in submicron channel region. The bias dependence of the extrinsic overlap capacitance is observed to be channel-doping-concentration dependent.

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M3 - Conference contribution

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T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

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BT - 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers

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Guo J-C, Hsu CCH, Lin PS, Chung SS. An accurate "decoupled C-V" method for characterizing channel and overlap capacitances of miniaturized MOSFET. In 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 1993. p. 256-260. 263594. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.1993.263594