Conventional quasi-static method is not adequate to predict the ac hot carrier effect in MOS devices. During the ac stress with fast rising or falling time, the hot carrier induced transient substrate current induces the enhanced degradations and is strong functions of the stress waveform rise time, fall time, duty ratio and frequency. An improved quasi-static method is employed by considering these enhanced degradations. As a result, exact match between experiment and simulation can be achieved. Hot carrier induced degradation effect and the reliability analysis in a circuit simulation environment using SPICE will be demonstrated with practical examples.
|Journal||Proceedings of the Custom Integrated Circuits Conference|
|State||Published - 1 Dec 1992|
|Event||14th Annual Custom Integrated Circuits Conference, CICC 1992 - Boston, MA, United States|
Duration: 3 May 1992 → 6 May 1992