An accurate approach to simulating the hot carrier reliability of MOS IC's under AC stress

Steve S. Chung*, P. C. Hsu, J. S. Lee

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Conventional quasi-static method is not adequate to predict the ac hot carrier effect in MOS devices. During the ac stress with fast rising or falling time, the hot carrier induced transient substrate current induces the enhanced degradations and is strong functions of the stress waveform rise time, fall time, duty ratio and frequency. An improved quasi-static method is employed by considering these enhanced degradations. As a result, exact match between experiment and simulation can be achieved. Hot carrier induced degradation effect and the reliability analysis in a circuit simulation environment using SPICE will be demonstrated with practical examples.

Original languageEnglish
Article number5727378
JournalProceedings of the Custom Integrated Circuits Conference
DOIs
StatePublished - 1 Dec 1992
Event14th Annual Custom Integrated Circuits Conference, CICC 1992 - Boston, MA, United States
Duration: 3 May 19926 May 1992

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