An accurate approach to simulating the hot carrier reliability of MOS IC's under AC stress

Steve S. Chung; P. C. Hsu; J. S. Lee

doi:10.1109/CICC.1992.591330

An accurate approach to simulating the hot carrier reliability of MOS IC's under AC stress

Steve S. Chung^*, P. C. Hsu, J. S. Lee

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Conventional quasi-static method is not adequate to predict the ac hot carrier effect in MOS devices. During the ac stress with fast rising or falling time, the hot carrier induced transient substrate current induces the enhanced degradations and is strong functions of the stress waveform rise time, fall time, duty ratio and frequency. An improved quasi-static method is employed by considering these enhanced degradations. As a result, exact match between experiment and simulation can be achieved. Hot carrier induced degradation effect and the reliability analysis in a circuit simulation environment using SPICE will be demonstrated with practical examples.

Original language	English
Article number	5727378
Journal	Proceedings of the Custom Integrated Circuits Conference
DOIs	https://doi.org/10.1109/CICC.1992.591330
State	Published - 1 Dec 1992
Event	14th Annual Custom Integrated Circuits Conference, CICC 1992 - Boston, MA, United States Duration: 3 May 1992 → 6 May 1992

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title = "An accurate approach to simulating the hot carrier reliability of MOS IC's under AC stress",

abstract = "Conventional quasi-static method is not adequate to predict the ac hot carrier effect in MOS devices. During the ac stress with fast rising or falling time, the hot carrier induced transient substrate current induces the enhanced degradations and is strong functions of the stress waveform rise time, fall time, duty ratio and frequency. An improved quasi-static method is employed by considering these enhanced degradations. As a result, exact match between experiment and simulation can be achieved. Hot carrier induced degradation effect and the reliability analysis in a circuit simulation environment using SPICE will be demonstrated with practical examples.",

author = "Chung, {Steve S.} and Hsu, {P. C.} and Lee, {J. S.}",

year = "1992",

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doi = "10.1109/CICC.1992.591330",

language = "English",

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T1 - An accurate approach to simulating the hot carrier reliability of MOS IC's under AC stress

AU - Chung, Steve S.

AU - Hsu, P. C.

AU - Lee, J. S.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - Conventional quasi-static method is not adequate to predict the ac hot carrier effect in MOS devices. During the ac stress with fast rising or falling time, the hot carrier induced transient substrate current induces the enhanced degradations and is strong functions of the stress waveform rise time, fall time, duty ratio and frequency. An improved quasi-static method is employed by considering these enhanced degradations. As a result, exact match between experiment and simulation can be achieved. Hot carrier induced degradation effect and the reliability analysis in a circuit simulation environment using SPICE will be demonstrated with practical examples.

AB - Conventional quasi-static method is not adequate to predict the ac hot carrier effect in MOS devices. During the ac stress with fast rising or falling time, the hot carrier induced transient substrate current induces the enhanced degradations and is strong functions of the stress waveform rise time, fall time, duty ratio and frequency. An improved quasi-static method is employed by considering these enhanced degradations. As a result, exact match between experiment and simulation can be achieved. Hot carrier induced degradation effect and the reliability analysis in a circuit simulation environment using SPICE will be demonstrated with practical examples.

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U2 - 10.1109/CICC.1992.591330

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M3 - Conference article

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JO - Proceedings of the Custom Integrated Circuits Conference

JF - Proceedings of the Custom Integrated Circuits Conference

SN - 0886-5930

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Y2 - 3 May 1992 through 6 May 1992

ER -

An accurate approach to simulating the hot carrier reliability of MOS IC's under AC stress

Abstract

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