An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask

Kun Ching Shen*, Wen Yu Lin, Dong Sing Wuu, Shih Yung Huang, Kuo Sheng Wen, Shih Feng Pai, Liang Wen Wu, Ray-Hua Horng

*Corresponding author for this work

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

We demonstrate here a 380-nm ultraviolet InGaN flip-chip (FC) light-emitting diode (LED) with self-textured oxide mask (STOM-FCLED) structures fabricated in a large-area (1125 × 1125μm 2 ) FC configuration. An 83% enhancement in the external quantum efficiency was achieved for the STOM-FCLEDs when compared with FCLEDs without the STOM structure operating at an injection current of 350 mA. For STOM-FCLEDs operating at an injection current of 1000 mA, a light output of approximately 400 mW was obtained. These results could be attributed to the introduction of the STOM structure, which not only reduces the density of threading dislocation but also intensifies the LED light extraction.

Original languageEnglish
Article number6400284
Pages (from-to)274-276
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number2
DOIs
StatePublished - 7 Jan 2013

Keywords

  • External quantum efficiency (EQE)
  • GaN
  • light-emitting diode (LED)
  • ultraviolet (UV) generation

Fingerprint Dive into the research topics of 'An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask'. Together they form a unique fingerprint.

  • Cite this