An 80 nm In0.7Ga0.3As MHEMT with flip-chip packaging for W-band low noise applications

Chin Te Wang*, Chien I. Kuo, Wee Chin Lim, Li Han Hsu, Heng-Tung Hsu, Yasuyuki Miyamoto, Edward Yi Chang, Szu Ping Tsai, Yu Sheng Chiu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The fabrication process of an 80 nm In0.7Ga0.3As MHEMT device with flip-chip packaging on Al2O3 substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high IDS = 425 mA/mm and high gm = 970 mS/mm at VDS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NFmin)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In0.7Ga0.3As MHEMT device for low noise applications at W-band.

Original languageEnglish
Title of host publication2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
Pages325-328
Number of pages4
DOIs
StatePublished - 30 Aug 2010
Event22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan
Duration: 31 May 20104 Jun 2010

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
CountryJapan
CityKagawa
Period31/05/104/06/10

Keywords

  • Flip-chip
  • HEMTs
  • InGaAs-channel

Fingerprint Dive into the research topics of 'An 80 nm In<sub>0.7</sub>Ga<sub>0.3</sub>As MHEMT with flip-chip packaging for W-band low noise applications'. Together they form a unique fingerprint.

Cite this