An 1.25Gbit/s -29dBm burst-mode optical receiver realized with 0.35um SiGe BiCMOS process using a PIN photodiode

Chun Chi Chen*, Chia-Ming Tsai, Li Ren Huang

*Corresponding author for this work

Research output: Contribution to conferencePaper

1 Scopus citations

Abstract

An 1.25Gbps high sensitivity burst-mode optical receiver is realized using TSMC 0.35um SiGe BiCMOS process. This burst-mode receiver uses PIN photodiode instead of expensive avalanche photodiode to achieve the sensitivity requirement of an OLT receiver in a PON system. With a 0.7pF PIN photodiode, the measured optical sensitivity for 1310nm light achieves -29dBm at 1.25Gbps under BER of 10-12. For burst-mode operation, the receiver provides fully differential output within 50ns after the start of an optical burst.

Original languageEnglish
Pages313-316
Number of pages4
StatePublished - 1 Dec 2004
Event2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology - Tainan, Taiwan
Duration: 6 Dec 20049 Dec 2004

Conference

Conference2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology
CountryTaiwan
CityTainan
Period6/12/049/12/04

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    Chen, C. C., Tsai, C-M., & Huang, L. R. (2004). An 1.25Gbit/s -29dBm burst-mode optical receiver realized with 0.35um SiGe BiCMOS process using a PIN photodiode. 313-316. Paper presented at 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology, Tainan, Taiwan.