An 1.25Gbps high sensitivity burst-mode optical receiver is realized using TSMC 0.35um SiGe BiCMOS process. This burst-mode receiver uses PIN photodiode instead of expensive avalanche photodiode to achieve the sensitivity requirement of an OLT receiver in a PON system. With a 0.7pF PIN photodiode, the measured optical sensitivity for 1310nm light achieves -29dBm at 1.25Gbps under BER of 10-12. For burst-mode operation, the receiver provides fully differential output within 50ns after the start of an optical burst.
|Number of pages||4|
|State||Published - 1 Dec 2004|
|Event||2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology - Tainan, Taiwan|
Duration: 6 Dec 2004 → 9 Dec 2004
|Conference||2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology|
|Period||6/12/04 → 9/12/04|