This paper reports an InGaZnO thin-film transistor with titanium-oxide semiconductor as channel capping layer. Based on the experimental results, the titanium-oxide semiconductor has the function of not only a surface passivation layer to reduce the defect states localized at grain boundaries near source/drain contacts, but also a mobility booster to enhance electric field across channel. Compared to control IGZO TFT, the crystalline IGZO TFTs with titanium-oxide semiconductor exhibits an improved performance of a low drive voltage of <5 V, a low threshold voltage of 1.9 V, a low sub-threshold swing of 244 mV/decade, and a high mobility of 13.7 cm(2)/V s. The simple titanium-oxide capping process have been demonstrated in this work, which provides considerable potential for further display applications requiring a low power operation and a low-temperature fabrication.
- Crystalline phase; indium-gallium-zinc oxide (IGZO); thin-film transistor (TFT); titanium oxide
- GATE DIELECTRICS; MOBILITY
Hsu, H-H., Chiou, P., Cheng, C-H., Yen, S. S., Tung, C-H., Chang, C-Y., Lai, C. Y., Li, H. W., Chang, C. P., Lu, H. H., Chuang, C. S., & Lin, Y. H. (2015). Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications. IEEE/OSA Journal of Display Technology, 11(6), 506-511. https://doi.org/10.1109/JDT.2014.2353091