Amorphous silicon integrated memory pixel circuit with low power consumption in TFT-LCD application

Guang Ting Zheng, Po-Tsun Liu, Cheng Yu Tsai, Yu Fan Tu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents integrated amorphous silicon thin film transistor (a-Si) memory pixel circuit which is composed of one N-type inverter block and coupling capacitor to achieve one second holding voltage for reducing the frequency to 1 Hz of data driver in static mode.

Original languageEnglish
Title of host publication22nd International Display Workshops, IDW 2015
PublisherInternational Display Workshops
Pages701-703
Number of pages3
ISBN (Electronic)9781510845503
StatePublished - 1 Jan 2015
Event22nd International Display Workshops, IDW 2015 - Otsu, Japan
Duration: 9 Dec 201511 Dec 2015

Publication series

NameProceedings of the International Display Workshops
Volume2
ISSN (Print)1883-2490

Conference

Conference22nd International Display Workshops, IDW 2015
CountryJapan
CityOtsu
Period9/12/1511/12/15

Keywords

  • A-Si TFT
  • LCD
  • Memory pixel circuit

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  • Cite this

    Zheng, G. T., Liu, P-T., Tsai, C. Y., & Tu, Y. F. (2015). Amorphous silicon integrated memory pixel circuit with low power consumption in TFT-LCD application. In 22nd International Display Workshops, IDW 2015 (pp. 701-703). (Proceedings of the International Display Workshops; Vol. 2). International Display Workshops.