Amorphous InGaZnO thin-film transistors compatible with roll-to-roll fabrication at room temperature

Ming Jiue Yu*, Yung Hui Yeh, Chun Cheng Cheng, Chang Yu Lin, Geng Tai Ho, Benjamin Chih Ming Lai, Chyi Ming Leu, Tuo-Hung Hou, Yi Jen Chan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

High-performance amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) are successfully fabricated on a colorless polyimide substrate using a top-gate self-aligned structure. All thin films are deposited by roll-to-roll-compatible sputtering processes at room temperature. The maximum field-effect mobility is 18 cm 2V• s, the threshold voltage is-1.35 V, the subthreshold slope is 0.1 V/decade, and the on/off current ratio is about 10 5. The results highlight that excellent device performance can be realized in a-IGZO TFTs without compromising manufacturability.

Original languageEnglish
Article number6071028
Pages (from-to)47-49
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number1
DOIs
StatePublished - 1 Jan 2012

Keywords

  • Amorphous InGaZnO
  • roll-to-roll
  • thin-film transistor (TFT)

Fingerprint Dive into the research topics of 'Amorphous InGaZnO thin-film transistors compatible with roll-to-roll fabrication at room temperature'. Together they form a unique fingerprint.

Cite this