High-performance amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) are successfully fabricated on a colorless polyimide substrate using a top-gate self-aligned structure. All thin films are deposited by roll-to-roll-compatible sputtering processes at room temperature. The maximum field-effect mobility is 18 cm 2V• s, the threshold voltage is-1.35 V, the subthreshold slope is 0.1 V/decade, and the on/off current ratio is about 10 5. The results highlight that excellent device performance can be realized in a-IGZO TFTs without compromising manufacturability.
- Amorphous InGaZnO
- thin-film transistor (TFT)