Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer

Hsiao-Wen Zan*, Wei Tsung Chen, Hsiu Wen Hsueh, Shih Chin Kao, Ming Che Ku, Chuang Chuang Tsai, Hsin-Fei Meng

*Corresponding author for this work

Research output: Contribution to journalArticle

60 Scopus citations

Abstract

This work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide (a -IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p-n junction diode. The p-n junction absorbs visible light and consequently injects electrons into the IGZO layer, which in turn affects the body voltage as well as the threshold voltage of a -IGZO TFT. The hysteresis behavior due to the charges at IGZO back interface is also discussed.

Original languageEnglish
Article number203506
JournalApplied Physics Letters
Volume97
Issue number20
DOIs
StatePublished - 15 Nov 2010

Fingerprint Dive into the research topics of 'Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer'. Together they form a unique fingerprint.

  • Cite this