Amorphous In 2 O 3 -Based thin film transistors fabricated by low-thermal budget process with high mobility and transparency

Chih Hsiang Chang, Chur Shyang Fuh, Chih Jui Chang, Che Chia Chang, Xiu Yun Yeh, Po-Tsun Liu, Hsin Hua Lin, Kuo Lung Fang, Yih Chyun Kao, Chih Lung Lee, Po Li Shih, Wei Chih Chang, I. Min Lu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, the influence of annealing on In-W-O (a-IWO) TFTs was investigated. The 100°C-annealed a-IWO TFTs exhibited an optimized performance with mobility of 39.16 cm 2 /Vs. Owing to the energy from annealing process, the structural relaxation can be enhanced leading to a better electrical characteristic of a-IWO TFTs.

Original languageEnglish
Title of host publication21st International Display Workshops 2014, IDW 2014
PublisherSociety for Information Display
Pages221-224
Number of pages4
ISBN (Electronic)9781510827790
StatePublished - 1 Jan 2014
Event21st International Display Workshops 2014, IDW 2014 - Niigata, Japan
Duration: 3 Dec 20145 Dec 2014

Publication series

Name21st International Display Workshops 2014, IDW 2014
Volume1

Conference

Conference21st International Display Workshops 2014, IDW 2014
CountryJapan
CityNiigata
Period3/12/145/12/14

Keywords

  • Low-thermal budget
  • Oxygen vacancies (V )
  • Transparent Amorphous Oxide Semiconductor (TAOS)

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